论文标题
使用超低离子光束对RB $^+$ $铣削速率进行调查
Investigation of Rb$^+$ Milling Rates using an Ultracold Focused Ion Beam
论文作者
论文摘要
已经研究了用于当前聚焦离子束（FIB）系统的几种离子源替代方案，以达到更高的亮度，包括冷原子离子源。但是，很少有关于与经常使用材料相互作用的超低离子的研究。在这里，我们研究了8.5 keV束能量的原型Ultracold RB Fib系统中的几个典型样品进行铣削。对于多晶金属底物（例如Cu和Au），观察到由RB $^+$离子铣削的图案降低了表面粗糙度，但与Ga $^+$ ions铣削的铣削速率仍然很高。 RB $^+$在半导体基板GAAS和INP上显示的溅射率与30 kev ga $^+$相似。 RB $^+$铣削的特殊情况表明，RB $^+$ $ ION BEAM的$ 2.6 \ times $ $在钻石上的溅射速度更快，但与正常的30 kev ga $^$^+$ $ ion beam相比，$ 3 \ times $ $ hable的溅射率。通常，RB $^+$ $离子光束被证明适合几种基本材料的纳米结构。
Several ion source alternatives for current focused ion beam (FIB) systems have been studied to achieve higher brightness, including cold atom ion sources. However, a study of ultracold ions interacting with often used materials is seldom reported. Here we investigate milling on several typical samples in a prototype ultracold Rb FIB system at 8.5 keV beam energy. For polycrystalline metallic substrates, such as Cu and Au, patterns milled by Rb$^+$ ions are observed to have reduced surface roughness, but still high milling rates compared with those milled by Ga$^+$ ions. Rb$^+$ also shows similar sputter rates as 30 keV Ga$^+$ on semiconductor substrates GaAs and InP. Special cases for Rb$^+$ milling show that the Rb$^+$ ion beam has a $2.6 \times$ faster sputter rate on diamond but a $3 \times$ slower sputter rate on Al compared with a normal 30 keV Ga$^+$ ion beam. Generally, a Rb$^+$ ion beam is shown to be suitable for nanostructuring of several basic materials.
