论文标题
硅和光塑料的自加热效果
Self-heating Effect in Silicon-Photomultipliers
论文作者
论文摘要
硅 - 闪光体（SIPM）中辐射损伤的主要作用是暗电流的急剧增加。功率消散（如果未正确冷却）会加热SIPM，其性能参数取决于温度。使用凯特克SIPM进行加热研究，粘在Al $ _2 $ o $ _3 $底物上，该基材直接连接到探针站的温度控制的Chuck，或者通过具有众所周知的热电阻的材料层。 SIPM由DC模式下操作的LED照明。测量SIPM电流并用于确定稳态温度作为在SIPM和热电阻乘积区域中消散的功率的函数，以及加热和冷却的时间依赖性。该信息可用于纠正针对辐射受损的SIPM确定的自热效果的参数。该方法也可以用于与散热器的热接触未知的包装sipm。本文提出的结果是初步的。
The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al$_2$O$_3$ substrate, which is either directly connected to the temperature-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in the multiplication region of the SiPM and thermal resistance, as well as the time dependencies for heating and cooling. This information can be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating. The method can also be employed for packaged SiPMs with unknown thermal contact to a heat sink. The results presented in this paper are preliminary.
