论文标题
$β$ -na $ _ {0.33} $ v $ _2 $ o $ $ $ _ {5} $的晶格动力学,磁性和电子传输的调查
Investigation of lattice dynamics, magnetism and electronic transport in $β$-Na$_{0.33}$V$_2$O$_{5}$
论文作者
论文摘要
我们研究了$β$ -NA $ _ {0.33} $ _2 $ _2 $ _2 $ o $ $ _5 $的电子和磁性和晶格动力学以及旋转耦合,使用温度依赖性的拉曼散射,DC-MAGNETIZER,DC-MAGNETIZED和DC-抗性和DC-抗性,X射线光发射,X射线光发射和吸收光谱。 XRD模式的rietveld用空间组C2/m确认了单斜结构。温度依赖性拉曼光谱的分析在13--673〜K的温度范围内揭示了声子频率的非谐依赖性和最大宽度的全宽度,这是对称声子衰减的认可。但是,低于40 K以下,声子频率以外的强度归因于自旋偶联。有趣的是,从磁化数据中估计的有效磁矩$μ_ {\ rm eff} = $ 0.63〜 $μ_b$,在4+中表现出v离子的混合价状态(18 $ \ pm $ 1 \%\%)和5+(82 $ \ pm $ 1 \%\%)。在X射线光发射和X射线吸收近边光谱中也观察到V $^{4+} $与V $^{5+} $的类似比率,并且发现与样品化学测定法一致。另外,V $^{4+} $离子分布在不同的钒(V1和V3)站点之间。在不同V位置处的扩展X射线吸收精细结构的分析给出了相应的V-O键长,该结构用于拉曼模式的分配中。此外,与温度相关的电阻率类似于半导体行为,在较高温度下,带传导频带传导促进了电荷载体的传输,并且通过跳高$ \ le $ \ le $ 260〜k。
We investigate the electronic and magnetic properties as well as lattice dynamics and spin-phonon coupling of $β$-Na$_{0.33}$V$_2$O$_5$ using temperature-dependent Raman scattering, dc-magnetization and dc-resistivity, x-ray photoemission, and absorption spectroscopy. The Rietveld refinement of XRD pattern with space group C2/m confirms the monoclinic structure. The analysis of temperature-dependent Raman spectra in a temperature range of 13--673~K reveals an anharmonic dependence of the phonon frequency and full width at half maximum, which is accredited to the symmetric phonon decay. However, below about 40 K, the hardening of the phonon frequency beyond anharmonicity is attributed to the spin-phonon coupling. Interestingly, the estimated effective magnetic moment $μ_{\rm eff}=$ 0.63~$μ_B$ from the magnetization data manifests a mixed-valence state of V ions in 4+ (18$\pm$1\%) and 5+ (82$\pm$1\%). A similar ratio of V$^{4+}$ to V$^{5+}$ is also observed in the x-ray photoemission and x-ray absorption near-edge spectra and that is found to be consistent with the sample stoichiometry. In addition, the V$^{4+}$ ions are distributed between different vanadium (V1 and V3) sites. The analysis of extended x-ray absorption fine structure at different V-sites gives the corresponding V--O bond lengths, which are utilized in the assignment of Raman modes. Moreover, the temperature-dependent resistivity resembles a semiconducting behavior where the charge carrier transport is facilitated by the band conduction at higher temperatures and via hopping $\le$260~K.