论文标题
散装质处理中的中王和远红外超脑产生，从5.3 $ $ m到32 $μ$ m
Mid- and Far-Infrared Supercontinuum Generation in Bulk Tellurium Spanning from 5.3 $μ$m to 32 $μ$m
论文作者
论文摘要
SuperContinuum Generation在散装半导体校库（TE）中进行了高功率Picsecond Co $ _2 $ _2 $ _2 $激光，高达20 GW/cm $^2 $。频谱从泵的第二个谐波跨度为5.3 $ $ m至32 $μ$ m。发现刺激的拉曼散射以及自相度调制和四个波混合是导致光谱拓宽的主要非线性光学过程。使用实验条件的数值模拟表明，TE的非线性折射率，$ n_ {2，\ textrm {eff}}} $（te）大约（40 $ \ pm $ 10）$ n_ {2，\ textrm {eff}}} $（GAAS），使这是一种非常有希望的材料，使其成为非元素光学的材料。
Supercontinuum generation is performed in the bulk semiconductor tellurium (Te) with a high-power picosecond CO$_2$ laser at peak intensities up to 20 GW/cm$^2$. The spectrum spans from the second harmonic of the pump at 5.3 $μ$m to 32 $μ$m. Stimulated Raman scattering along with self-phase modulation and four wave mixing are found to be the main nonlinear optical processes leading to the spectral broadening. Numerical simulations using the experimental conditions indicate that the nonlinear refractive index of Te, $n_{2,\textrm{eff}}$(Te) is about (40 $\pm$ 10) $n_{2,\textrm{eff}}$(GaAs), making this a very promising material for nonlinear optical devices.
