论文标题
石墨烯/基于SOI的自动schottky屏障光电二极管阵列
Graphene/SOI-based self-powered Schottky barrier photodiode array
论文作者
论文摘要
我们已经在基于绝缘体（SOI）的Schottky屏障光电二极管阵列（）PDA上制造了4元素石墨烯/硅，并研究了其光电设备性能。在我们的设备设计中，单层石墨烯被用作SOI基板上N型SI通道的线性定义的线性阵列上的常见电极。正如波长解析的光电流光谱测量值所揭示的那样，PDA结构中的每个元素都表现出与在自动操作模式下运行的市售光二极管相当的最大光谱响应性。时间依赖性光电流光谱测量显示了设备的出色光电流可逆性。预计此处提供的研究将在基于高增值的石墨烯/基于SI的PDA设备应用方面提供令人兴奋的机会，例如多波长光测量，水平计量，高速光度法，位置/运动检测等。
We have fabricated 4-element Graphene/Silicon on Insulator (SOI) based Schottky barrier photodiode array ()PDA and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as common electrode on lithographically defined linear array of n-type Si channels on SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity comparable to that of commercially available photodiodes operating under self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, position/motion detection, and more.
