论文标题
III氮化物半导体的生长，表征和热力学
Growth, characterization, and thermodynamics of III-nitride semiconductors
论文作者
论文摘要
III氮化合金是宽带间隙半导体，在光电设备中具有广泛应用，例如发光二极管和激光二极管。在过去的十年中，氮化液发射二极管已成功生产。但是，绿色发射光设备的进展受到合金中的粘液掺入的限制，这主要是由于相分离。可以通过研究这些合金的生长和热力学来解决这个困难。了解热力学相位稳定性和压力 - 温度 - 成分相图对于理解各种生长技术的边界条件很重要。在本文中，使用三元合金系统的常规溶液模型对氮化酰胺的相分离进行了研究。在一系列温度下产生了混合的吉布斯自由能的图。双脊和微旋缺分解曲线显示了平衡中合金的稳定和不稳定区域。
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys. Knowledge of thermodynamic phase stabilities and of pressure - temperature - composition phase diagrams is important for an understanding of the boundary conditions of a variety of growth techniques. In this dissertation a study of the phase separation of indium gallium nitride is conducted using a regular solution model of the ternary alloy system. Graphs of Gibbs free energy of mixing were produced for a range of temperatures. Binodal and spinodal decomposition curves show the stable and unstable regions of the alloy in equilibrium.
