论文标题
拓扑设计的jeff = 1/2电子
Quasi-2D anomalous Hall Mott insulator of topologically engineered Jeff =1/2 electrons
论文作者
论文摘要
我们在[（sriro3）1/（catio3）1]中研究了一个伪柔软的方形晶格哈伯顿汉密尔顿的实验玩具模型系统，以包括非平凡的复杂跳跃和中等电子相关性。尽管前者从弱耦合极限中诱导了电子浆果相，但后来稳定了抗铁磁（AFM）Mott绝缘体基态，类似于强耦合极限。他们在实际系统中的结合结果被发现是一种异常的大厅效应，由于莫特州的电子孔配对的自我同意而具有非单调温度依赖性，并且是一个异常大的ISINIS各向异性，它被捕获为超越超级巨人的巨型镁质差距。不寻常的现象突出了中间耦合方案中电子拓扑和电子相关性的丰富相互作用，在理论建模中基本上没有探索且具有挑战性。
We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO3)1/(CaTiO3)1] to include both nontrivial complex hopping and moderate electronic correlation. While the former induces electronic Berry phases as anticipated from the weak-coupling limit, the later stabilizes an antiferromagnetic (AFM) Mott insulator ground state in analogous to the strong-coupling limit. Their combined results in the real system are found to be an anomalous Hall effect with a non-monotonic temperature dependence due to the self-competition of the electron-hole pairing in the Mott state, and an exceptionally large Ising anisotropy that is captured as a giant magnon gap beyond the superexchange approach. The unusual phenomena highlight the rich interplay of electronic topology and electronic correlation in the intermediate-coupling regime that is largely unexplored and challenging in theoretical modelling.
