论文标题
使用聚焦电子束诱导沉积的Si（OET）在AU（111）/SIO2底物上的4个沉积物的结构分析
Structural Analysis of Si(OEt)4 Deposits on Au(111)/SiO2 Substrates at Nanometer Scale using Focused Electron Beam Induced Deposition
论文作者
论文摘要
通过使用具有1 keV的光束特性和24Pa的双子座SEM用于柱子的沉积和线形沉积物，高度从9nm到1UM，并从5nm到0.5UM，使用了焦点束诱导的沉积过程（Febid）过程。所有结构均已分析为其组成，以查看所需的Si：O：C含量为1：2：0。在空气中保存的较旧沉积物（在室温下〜）中，该结构的C含量〜超过60％，而年轻的沉积物中只有12个小时的年轻沉积物。使用Si（OET）4的沉积以高速率和低于0摄氏度的沉积温度，我们的结构的SI含量在10AT％至15AT％（组成百分比）之间。 Febid结构已在SiO2晶圆上沉积在AU（111）上。 The Au(111) was chosen as a substrate for the deposition of Si(OEt)4 due to its structural and morphological properties, with its surface granulation following a Chevron pattern, and the Au(111) defects having a higher contribution to the change in the composition of the final content of the structure with the increase in O ratio and a reduction in the shapes heights.
The focused electron beam induced deposition (FEBID) process was used by employing a Gemini SEM with a beam characteristic of 1keV and 24pA for the deposition of pillars and line shaped deposits with heights between 9nm to 1um and widths from 5nm to 0.5um. All structures have been analyzed to their composition looking at a desired Si : O : C content of 1: 2 : 0. The C content of the structure was found to be ~over 60% for older deposits kept in air (~at room temperature) and less than 50% for younger deposits, only 12 hours old. Using a deposition of Si(OEt)4 at high rates and a deposition temperature of under 0 degC, an Si content of our structure between 10at% and 15at% (compositional percentage) was obtained. The FEBID structures have been deposited on Au(111) over an SiO2 wafer. The Au(111) was chosen as a substrate for the deposition of Si(OEt)4 due to its structural and morphological properties, with its surface granulation following a Chevron pattern, and the Au(111) defects having a higher contribution to the change in the composition of the final content of the structure with the increase in O ratio and a reduction in the shapes heights.
