论文标题
单轴和等静压变化中硅纳米线的压电表征
Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation
论文作者
论文摘要
已知硅纳米线（SINW）表现出较大的压电（PZR）效应，使其适合各种感应应用。在这里，我们报告了对随机分布和相互连接的垂直硅纳米线阵列作为压力传感器的PZR研究结果。这些样品是使用银色的自上而下蚀刻过程从P型（100）Si晶片中生产的。通过测量其单轴和等静力压力下的I-V特性来分析这些SINW阵列的压电响应。与分离或周期性纳米线相比，相互联系的SINW具有增加的机械稳定性。还测试了来自不同批次的几个样品的制造过程的可重复性和测量值的统计分布。通过单轴力施加，观察到向大致\ si {1} {\ milli \ bar}的传感分辨率，并确定了低于大气压力的同位压力的两个以上的数量级电阻变化。
Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalysed top-down etching process. The piezoresistance response of these SiNW arrays was analysed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly \SI{1}{\milli\bar} pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation was determined for isostatic pressure below atmospheric pressure.
