论文标题
介电敏感性的可尺度$ε_{zz} $具有层的数量和van der waals半导体中铁电偏振的添加性
Scaleability of dielectric susceptibility $ε_{zz}$ with the number of layers and additivity of ferroelectric polarization in van der Waals semiconductors
论文作者
论文摘要
我们研究了各种过渡金属二核苷（TMDS）和六角硼硝化物（HBN）的几个分层晶体的介电响应。我们表明，多层晶体（表征对外部位移场的响应）的平面外极化率与层数线性缩放，$α_{zz}^{nl} =nα_{zz {zz}^{1l} $，独立于胶卷中的堆叠配置。在此类接口破裂的对称性时，我们还建立了连续界面的铁电极化的添加性。然后，我们使用了单层$α_{zz}^{1L} $的数据来计算半导体TMD和HBN散装晶体的介电敏感性值。
We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polarizability of a multilayer crystal (which characterizes response to the external displacement field) scales linearly with the number of layers, $α_{zz}^{NL} =N α_{zz}^{1L}$, independently of the stacking configuration in the film. We also established additivity of ferroelectric polarizations of consecutive interfaces in case when such interfaces have broken inversion symmetry. Then we used the obtained data of monolayer $α_{zz}^{1L}$ to calculate the values of the dielectric susceptibilities for semiconductor TMDs and hBN bulk crystals.
