论文标题
在石墨烯/SIC界面处限制的2D石墨样氮化壳和结构选择性
2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface
论文作者
论文摘要
预测的第一原理计算表明，在理论上可能是可能的。到目前为止，尚未经过实验报告。我们报告了通过金属有机化学蒸气沉积（MOCVD）在石墨烯/SIC接口处获得的弯曲几何形状中的GAN单层。导电原子力显微镜（C-AFM）已被用来通过石墨烯/SIC界面探测垂直电流注射，并确定插入区域的均匀性。扫描透射电子显微镜（S/TEM）已用于原子分辨率成像和光谱法。在预期的类似石墨状GAN单层的预期堆叠序列中的不连续性已被暴露并被认为是同时形成Ga-N和Ga-O键的情况。 GA-O键的形成在原子尺寸尺寸下以限制化学物种特定的结构选择性来获得重要性。
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD). Conductive atomic force microscopy (C-AFM) has been employed to probe vertical current injection through the graphene/SiC interface and to establish the uniformity of the intercalated areas. Scanning transmission electron microscopy (S/TEM) has been employed for atomic resolution imaging and spectroscopy. Discontinuity in the anticipated stacking sequence of graphitic-like GaN monolayers has been exposed and reasoned as a case of simultaneous formation of Ga-N and Ga-O bonds. The formation of Ga-O bonds acquires importance in instigating chemical-species-specific structural selectivity in confinement at atom-size scale.
