论文标题
SIS连接中的电压放大热矫正
Voltage-amplified heat rectification in SIS junctions
论文作者
论文摘要
热通量的控制 - 在两端系统中使用热二极管,可以通过热进行中尺度和纳米级电子电路中的幅度和方向来实现。由向前和向后热通量的比率给出的矫正系数$ \ MATHCAL {R} $随二极管的设计以及系统操作的工作条件而变化。 $ \ MATHCAL {R} \ ll 1 $或$ \ MATHCAL {R} \ GG 1 $的值是高热整流性能的签名,但是当前的解决方案允许此类范围,需要相当复杂的设计。在这里,我们提出了一个简单的解决方案:在施加的快速振荡(THZ范围)电压下使用超导体 - 绝缘体 - 渗透器(SIS)连接,因为可以通过调谐超导相的初始值来完成热流方向和大小的控制。我们基于绿色功能形式主义和连贯的运输理论的理论模型显示了热量矫正系数的急剧上升,值最多$ \ Mathcal {r} \大约500 $超出了绝热状态。突出显示了量子相干作用对SIS连接中热矫正的影响。
The control of thermal fluxes -- magnitude and direction, in mesoscale and nanoscale electronic circuits can be achieved by means of heat rectification using thermal diodes in two-terminal systems. The rectification coefficient $\mathcal{R}$, given by the ratio of forward and backward heat fluxes, varies with the design of the diode and the working conditions under which the system operates. A value of $\mathcal{R}\ll 1$ or $\mathcal{R}\gg 1$ is a signature of high heat rectification performance but current solutions allowing such ranges, necessitate rather complex designs. Here, we propose a simple solution: the use of a superconductor-insulator-superconductor (SIS) junction under an applied fast oscillating (THz range) voltage as the control of the heat flow direction and magnitude can be done by tuning the initial value of the superconducting phase. Our theoretical model based on the Green functions formalism and coherent transport theory, shows a possible sharp rise of the heat rectification coefficient with values up to $\mathcal{R} \approx 500$ beyond the adiabatic regime. The influence of quantum coherent effects on heat rectification in the SIS junction is highlighted.