论文标题
MTMD双层的掺杂的二维金属相中的温度依赖性电阻率
Temperature dependent resistivity in the doped two dimensional metallic phase of mTMD bilayers
论文作者
论文摘要
康奈尔和哥伦比亚的最近两个实验报告了在二维（2D）MoiréTransitionMetal Dichalcogenides（MTMD）中进行的绝缘体到金属的过渡，该型号是通过掺杂在半填充量的情况下引起的，该系统是Mott绝缘子。在当前的工作中，我们考虑了这种金属阶段在掺杂的情况下的温度依赖性电阻率，从而从半填充中填充，认为它是由于强烈依赖于温度的2D Friedel振荡（即有限的动量筛选）引起的，与随机淬灭的杂质相关，导致观察到的线性质量在$ $ $ ther-$ the the Metalic selallic中，导致了强烈的增长。我们的理论似乎解释了有效的MoiréTMD频段围绕掺杂量的温度依赖性金属电阻率，这表明依赖温度依赖的筛分的库仑疾病是掺杂的2D MTMD物理学的重要成分。
Two recent experiments from Cornell and Columbia have reported insulator-to-metal transitions in two-dimensional (2D) moiré transition metal dichalcogenides (mTMD) induced by doping around half-filling, where the system is a Mott insulator. In the current work, we consider the temperature dependent resistivity of this metallic phase in the doped situation away from half-filling, arguing that it arises from the strongly temperature dependent 2D Friedel oscillations (i.e. finite momentum screening) associated with random quenched charged impurities, leading to the observed strongly increasing linear-in-$T$ resistivity in the metallic phase. Our theory appears to account for the temperature-dependent metallic resistivity for doping around half-filling of the effective moiré TMD band, showing that temperature-dependent screened Coulomb disorder is an essential ingredient of doped 2D mTMD physics.
