论文标题
用于暗物质搜索的核后坐力的固有狂热因素
Intrinsic Fano factor of nuclear recoils for dark matter searches
论文作者
论文摘要
显示出，锗和硅在电子孔产量中的核后坐力比其电子回路的差异要大得多。这种作用主要是由于林达德模型预测了给定能量的核后坐力响应晶体晶格的能量量的偏差。我们以固有的核后坐力因素为24.3 $ \ pm 0.2 $ 0.2和26 $ \ pm的差异分别为25 \，分别为25 \，分别为硅和锗。该方差对利用低能核后坐力的实验的预期信号形状具有重要影响，例如直接暗物质搜索和连贯的中微子核核散射测量。
Nuclear recoils in germanium and silicon are shown to have much larger variance in electron-hole production than their electron-recoil counterparts for recoil energies between 10 and 200\,keV. This effect--owing primarily to deviations in the amount of energy given to the crystal lattice in response to a nuclear recoil of a given energy--has been predicted by the Lindhard model. We parameterize the variance in terms of an intrinsic nuclear recoil Fano factor which is 24.3$\pm$0.2 and 26$\pm$8 at around 25\,keV for silicon and germanium respectively. The variance has important effects on the expected signal shapes for experiments utilizing low-energy nuclear recoils such as direct dark matter searches and coherent neutrino-nucleus scattering measurements.
