论文标题

具有单数电位的薄膜方程:接触线悖论的替代解决方案

Thin-film equations with singular potentials: an alternative solution to the contact-line paradox

论文作者

Durastanti, Riccardo, Giacomelli, Lorenzo

论文摘要

在润滑近似制度中,我们考虑在$ p(h)\ of $ h \ to $ h \ to $ h \ to $ m> 1 $的奇异电位的作用下传播现象,并在液体-GAS界面和底物之间进行建模。我们假设在接触线处零滑点。基于正式的分析论点,我们报告说,对于任何$ m> 1 $,速度的任何值(正值和负面)都存在三参数,因此是通用的阵线家族(即带有接触线的旅行波解决方案)。在液体中具有对数校正的线性行为,也存在着前进的“线性log”前线的两参数家族。所有这些前部都有有限的耗散速率,表明奇异电位是接触线悖论的替代解决方案。与稳态一致,前线的显微镜接触角等于所有$ m> 1 $的$π/2 $,所有$ m <3 $的有限能量。我们还基于热力学一致的接触线条件在接触线上建模摩擦,为前线提出了一个选择标准。因此,正如滑板模型的接触角条件所做的那样,该标准为每个正速度选择了一个唯一的(转换)线性固定前log前端。数值证据表明,固定了速度和摩擦系数,其形状取决于扩散系数,其部分润湿的前部更陡峭,并且在干燥完整的润湿中更为突出的前体区域。

In the regime of lubrication approximation, we look at spreading phenomena under the action of singular potentials of the form $P(h)\approx h^{1-m}$ as $h\to 0^+$ with $m>1$, modeling repulsion between the liquid-gas interface and the substrate. We assume zero slippage at the contact line. Based on formal analysis arguments, we report that for any $m>1$ and any value of the speed (both positive and negative) there exists a three-parameter, hence generic, family of fronts (i.e., traveling-wave solutions with a contact line). A two-parameter family of advancing "linear-log" fronts also exists, having a logarithmically corrected linear behaviour in the liquid bulk. All these fronts have finite rate of dissipation, indicating that singular potentials stand as an alternative solution to the contact-line paradox. In agreement with steady states, fronts have microscopic contact angle equal to $π/2$ for all $m>1$ and finite energy for all $m<3$. We also propose a selection criterion for the fronts, based on thermodynamically consistent contact-line conditions modeling friction at the contact line. So as contact-angle conditions do in the case of slippage models, this criterion selects a unique (up to translation) linear-log front for each positive speed. Numerical evidence suggests that, fixed the speed and the frictional coefficient, its shape depends on the spreading coefficient, with steeper fronts in partial wetting and a more prominent precursor region in dry complete wetting.

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