论文标题

通过源批次调制抑制混合单电子旋转栅栏中的背部敲击事件

Suppression of back-tunnelling events in hybrid single-electron turnstiles by source-drain bias modulation

论文作者

Marín-Suárez, Marco, Pashkin, Yuri A., Peltonen, Joonas T., Pekola, Jukka P.

论文摘要

在高运行频率下,在混合旋转栅门中产生的单电子电流的准确性除其他误差外,还受到错误方向上的电子隧穿的限制。增加了岛屿与线索之间的障碍透明度,尽管源供水偏置有助于在较大的频率范围内抑制这些事件,尽管它们导致了一些额外的误差。我们在实验上证明了一种驱动方案,该方案抑制了错误的方向,因此扩展了生成准确的单电子电流的频率范围。该方法的主要特征是额外的AC信号应用于偏差,频率是频率的两倍,因为频率应用于栅极电极。这允许对岛化学潜力进行其他调节。通过在某些参数下使用新方法,我们将单电子电流准确度提高了一个数量级。最后,我们通过实验对比的计算表明,即使在通常的门驾驶的设备中,我们的方法也可以提高准确性。

Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the leads, and the source-drain bias helps to suppress these events in a larger frequency range, although they lead to some additional errors. We experimentally demonstrate a driving scheme that suppresses tunnelling in the wrong direction hence extending the range of frequencies for generating accurate single-electron currents. The main feature of this approach is an additional AC signal applied to the bias with twice the frequency as the one applied to the gate electrode. This allows additional modulation of the island chemical potential. By using the new approach under certain parameters, we improve the single-electron current accuracy by one order of magnitude. Finally, we show through experimentally-contrasted calculations that our method can improve accuracy even in devices for which the usual gate driving gives errors $\sim 10^{-3}$ at high frequencies and can bring them under $5\times 10^{-4}$.

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