论文标题
原子薄的半导体中的Trion-Phonon相互作用
Trion-phonon interaction in atomically thin semiconductors
论文作者
论文摘要
掺杂的单层半导体的光学和传输性能由Trions主导,这是由两个电子形成的三粒子化合物,反之亦然。在这项工作中,我们研究了微观基础上的Trion-Phonon相互作用,并将我们的模型应用于丙二钼(Mose2)单层的模范情况。我们通过求解TrionSchrödinger方程来确定一系列状态及其内部量子结构。将系统转换为TRION和求解运动方程,包括二阶Born-Markov近似中的Trion-Phonon相互作用,提供了对TRION动力学的微观访问。特别是,我们研究了Trion繁殖并计算扩散系数和迁移率。在低密度极限中,我们发现Trions由于与声子和较大的质量耦合而效率低于激子和电子。为了增加密度,我们预测由退化的Trion气体堆积大压力引起的扩散的急剧增强,这是Trions的费米子特征的直接结果。我们的工作为Trion-Phonon相互作用及其对原子薄半导体的扩散行为的影响提供了微观见解。
Optical and transport properties of doped monolayer semiconductors are dominated by trions, which are three-particle compounds formed by two electrons and one hole or vice versa. In this work, we investigate the trion-phonon interaction on a microscopic footing and apply our model to the exemplary case of a molybdenum diselenide (MoSe2) monolayer. We determine the trion series of states and their internal quantum structure by solving the trion Schrödinger equation. Transforming the system into a trion basis and solving equations of motion, including the trion-phonon interaction within the second-order Born-Markov approximation, provides a microscopic access to the trion dynamics. In particular, we investigate trion propagation and compute the diffusion coefficient and mobility. In the low density limit, we find that trions propagate less efficiently than excitons and electrons due to their stronger coupling with phonons and their larger mass. For increasing densities, we predict a drastic enhancement of diffusion caused by the build-up of a large pressure by the degenerate trion gas, which is a direct consequence of the fermionic character of trions. Our work provides microscopic insights into the trion-phonon interaction and its impact on the diffusion behaviour in atomically thin semiconductors.