论文标题
用于光学不连续的超紧凑等离子体调节剂
Ultra-compact plasmonic modulator for optical inteconnects
论文作者
论文摘要
这项工作旨在设计一个由等离子辅助的CMOS兼容，低电力消耗调制器。为了使电力消耗的紧凑性和降低，选择了基于Franz-keldysh晶锗效应的电吸附进行调节。它在于在静态电场的应用下，带边缘附近材料的吸收系数的变化，因此产生了光强度的直接调节。血浆的使用允许由于高场限制而增强电流效应。开发了一个集成的电流仿真工具，以设计和优化调制器。设计的等离子调节器的灭绝比为3.3 dB，插入损失为13.2 dB，电力消耗低至20 fj/l，即硅光子调节器报告的最低电力消耗。还通过优化的Si-GE锥度来设计与标准硅波导的内部和外耦合，从而将耦合损耗降低至每个耦合器仅1 dB。此外，进行了一项实验性工作，以尝试将最大在1650 nm处的Franz-keldysh效应转移到接近1.55μm的较低波长，以用于电信应用。
This work aims to design a CMOS compatible, low-electrical power consumption modulator assisted by plasmons. For compactness and reduction of the electrical power consumption, electro-absorption based on the Franz-Keldysh effect in Germanium was chosen for modulation. It consists in the change of the absorption coefficient of the material near the band edge under the application of a static electric field, hence producing a direct modulation of the light intensity. The use of plasmons allows enhancing the electro-optical effect due to the high field confinement. An integrated electro-optical simulation tool was developed to design and optimize the modulator. The designed plasmonic modulator has an extinction ratio of 3.3 dB with insertion losses of 13.2 dB and electrical power consumption as low as 20 fJ/bit, i.e. the lowest electrical power consumption reported for silicon photonic modulators. In- and out-coupling to a standard silicon waveguide was also engineered by the means of an optimized Si-Ge taper, reducing the coupling losses to only 1 dB per coupler. Besides, an experimental work was carried out to try to shift the Franz-Keldysh effect, which is maximum at 1650 nm, to lower wavelength close to 1.55 μm for telecommunication applications.
