论文标题
稀d型波段半导体中的非常规的电荷密度波顺序
Unconventional Charge-density-wave Order in a Dilute d-band Semiconductor
论文作者
论文摘要
低维材料中的电子晶格耦合效应产生了电荷密度波(CDW)和相变。这些现象是超导性的关键成分,主要发生在金属模型系统(例如掺杂的蛋饼,过渡金属二核苷)以及最近在Kagome晶格材料中。但是,半导体系统中的CDW,特别是在低载体浓度区域的极限上,并不常见。在这里,我们结合了电运输,同步子X射线衍射和光谱光谱,以在准二维(1D),稀释的D波段半导体,BATIS3中发现CDW阶,这表明存在强的电子 - phonon耦合。 CDW州进一步进行了不寻常的过渡,其载体移动性急剧增加。我们的工作将BATIS3建立为一个独特的平台,以稀释填充极限研究CDW物理学,以探索新型的电子相。
Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifically at the limit of low carrier concentration region, is uncommon. Here, we combine electrical transport, synchrotron X-ray diffraction and optical spectroscopy to discover CDW order in a quasi-one-dimensional (1D), dilute d-band semiconductor, BaTiS3, which suggests the existence of strong electron-phonon coupling. The CDW state further undergoes an unusual transition featuring a sharp increase in carrier mobility. Our work establishes BaTiS3 as a unique platform to study the CDW physics in the dilute filling limit to explore novel electronic phases.