论文标题
终止层在$ Laino_ {3} $/$ basno_ {3} $接口处终止层在2维状态的形成中的关键作用
Critical role of terminating layer in formation of 2DEG state at the $LaInO_{3}$/$BaSnO_{3}$ interface
论文作者
论文摘要
基于接口极化模型，$ Laino_ {3} $（LIO）/$ basno_ {3} $（BSO）接口的二维电子气体（2DEG）可以理解是源自界面上的偏光性不连续性和LIO和BSO之间的导出偏移。在这种情况下，接口处的极化方向是由接口上的第一个原子lio层是lao $^{+} $还是ino $ _ {2}^{ - } $。我们研究了终止层在LIO/BSO界面创建2DEG中的作用。基于我们原位种植的LIO/BSO异质结构的电导测量，我们在这项工作中报告说，只有在用SNO $ _ {2} $ layer终止BSO表面时才会形成2DEG。我们通过BSO表面上的其他SNO $ _ {2} $沉积来控制终止层。我们表明，生长的BSO表面具有BAO和SNO $ _ {2} $的混合终端层，而用其他SNO $ _ {2} $沉积准备的BSO表面主要用SNO $ _ {2} $ layer终止。通过同轴冲击碰撞离子散射光谱（CAICISS）证实终止层。我们的发现与在LIO/BSO接口处的2度形成的界面极化模型一致，其中LIO中界面极化的方向取决于BSO表面的终止层。
Based on the interface polarization model, the two-dimensional electron gas (2DEG) at $LaInO_{3}$(LIO)/$BaSnO_{3}$(BSO) interfaces is understood to originate from a polarization discontinuity at the interface and the conduction band offset between LIO and BSO. In this scenario, the direction of polarization at the interface is determined by whether the first atomic LIO layer at the interface is LaO$^{+}$ or InO$_{2}^{-}$. We investigate the role of the terminating layer at the LIO/BSO interface in creating the 2DEG. Based on conductance measurements of our in-situ grown LIO/BSO heterostructures, we report in this work that the 2DEG only forms when the BSO surface is terminated with a SnO$_{2}$ layer. We controlled the terminating layer by additional SnO$_{2}$ deposition on the BSO surface. We show that the as-grown BSO surface has a mixed terminating layer of BaO and SnO$_{2}$ while the BSO surfaces prepared with additional SnO$_{2}$ deposition are terminated mainly with the SnO$_{2}$ layer. The terminating layer was confirmed by coaxial impact collision ion scattering spectroscopy (CAICISS). Our finding is consistent with the interface polarization model for 2DEG formation at LIO/BSO interfaces, in which the direction of the interfacial polarization in LIO is determined by the terminating layer of the BSO surface.
