论文标题
拓扑绝缘体多层结构中的高chern数阶段：狄拉克锥模型研究
High Chern number phase in topological insulator multilayer structures: a Dirac cone model study
论文作者
论文摘要
我们使用Dirac锥模型来探索Zhao等人在磁掺杂拓扑绝缘子（TI）多层结构中实现的高cher量（C）阶段。 [自然588，419（2020）]。 Chern数是通过使用参数捕获相边界的演变来计算的，然后获得了Ti多层结构的Chern数字相图。高-C行为归因于重新归一化的Dirac锥的带反转，并随着γ点处的自旋极化而增加。此外，还研究了另外两个Ti多层结构以及Ti超晶格结构。
We use the Dirac cone model to explore the high Chern number (C) phases that are realized in the magnetic-doped topological insulator (TI) multilayer structures by Zhao et al. [Nature 588, 419 (2020)]. The Chern number is calculated by capturing the evolution of the phase boundaries with the parameters and then the Chern number phase diagrams of the TI multilayer structures are obtained. The high-C behavior is attributed to the band inversion of the renormalized Dirac cones, along with which the spin polarization at the Γpoint will get increased. Moreover, another two TI multilayer structures as well as the TI superlattice structures are also studied.
