论文标题
INAS纳米片中的电气可调节旋转轨道相互作用
Electrically tunable spin-orbit interaction in an InAs nanosheet
论文作者
论文摘要
我们报告了一项在双门效率设备中表现出独立的INAS纳米片中自旋轨道相互作用（SOI）的实验研究。栅极转移特性测量表明，纳米片中载体密度的独立调谐，并且可以使用双门有效地实现纳米片的电势差。通过低温下的磁性测量，研究了INAS纳米片的量子传输特性。结果表明，纳米片中的电子传输可以从弱的抗静电化到弱定位，然后返回到弱的抗静脉化状态，并在双门上施加电压而不会改变载波密度。从恒定载体密度以恒定的载体测量结果提取的自旋轨道长度表现出峰值的峰值，在该峰值值中，Rashba类型的SOI被抑制，并且由于在纳米片中存在Dresselhaus类型的SOI而引起的自旋松弛。在实验条件下还为设备进行了能量带图模拟，并根据模拟的结果讨论了对实验观察的物理见解。
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations.
