论文标题
电流诱导的磁化逆转（GA，MN）（BI，AS）外延，垂直磁各向异性
Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
论文作者
论文摘要
脉冲电流诱导的磁化逆转在（GA，MN）（BI，AS）的层中，稀释的铁磁半导体（DFS）在拉伸不合适的菌株下外生生长，从而导致该层的垂直磁各向异性。通过对平行于电流的静态磁场的帮助，通过测量异常霍尔效应的测量记录的磁化逆转是用自旋轨道扭矩机制来解释的。我们的结果表明，在原型DFS（GA，MN）中替换了一小部分重的双原子，并将其替换为DFS Valence频段中自旋轨道耦合的强度，从而显着提高了当前诱导的磁化逆转的效率，从而大大降低了必要的阈值当前密度的速率。我们的发现对于用于自旋轨道扭矩驱动的非易失性记忆和逻辑元素的应用至关重要。
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The magnetization reversal, recorded through measurements of the anomalous Hall effect, appearing under assistance of a static magnetic field parallel to the current, is interpreted in terms of the spin-orbit torque mechanism. Our results demonstrate that an addition of a small fraction of heavy Bi atoms, substituting As atoms in the prototype DFS (Ga,Mn)As and increasing the strength of spin-orbit coupling in the DFS valence band, significantly enhances the efficiency of current-induced magnetization reversal thus reducing considerably the threshold current density necessary for the reversal. Our findings are of technological importance for applications to spin-orbit torque-driven nonvolatile memory and logic elements.
