论文标题
通过Laplace DLTS区分N型4H-SIC中的EH1和S1缺陷
Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS
论文作者
论文摘要
我们报告了通过深度瞬态光谱（DLTS）和Laplace DLTS研究的低能电子和快速辐照的4H-SIC。辐照引入了两个缺陷，EC-0.4EV和EC-0.7EV。以前，它们被分别为标记为EH1/3的碳间质（CI），分别用于低能电子和快速中子辐照，标记为S1/2的硅胶囊（VSI）。这项工作说明了如何将拉普拉斯DLT用作区分EH1和S1缺陷的有用工具。我们表明，EH1由CI（H）产生的单个发射线组成，而S1具有两个发射线，该发射线由VSI（H）和VSI（K）晶格位点产生。
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec-0.4eV and Ec-0.7eV. They were previously assigned to carbon interstitial (Ci) labeled as EH1/3 and silicon-vacancy (VSi) labeled as S1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci(h), while S1 has two emission lines arising from the VSi(h) and VSi(k) lattice sites.
