论文标题
pseudogap金属和磁化高原来自兴奋剂MoiréMott绝缘子
Pseudogap metal and magnetization plateau from doping moiré Mott insulator
论文作者
论文摘要
兴奋剂莫特绝缘子的问题至关重要，并且在对密切相关的电子系统的研究中具有长期的兴趣。基于半导体的Moiré材料的出现为模拟三角形晶格上的Hubbard模型开辟了一个新的基础，并探索了掺杂的Mott绝缘子的丰富相图作为掺杂和外部磁场的函数。基于我们最近对Mott绝缘体中自旋极性二粒子的鉴定，在这项工作中，我们预测，在小掺杂和中间场范围内出现了一种新的金属状态，这是一种伪装金属，一种表现出单颗粒间隙和掺杂依赖性的磁磁化的伪基金属。
The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moiré materials opens a new ground for simulating the Hubbard model on the triangular lattice and exploring the rich phase diagram of doped Mott insulators as a function of doping and external magnetic field. Based on our recent identification of spin polaron quasiparticle in Mott insulator, in this work we predict a new metallic state emerges at small doping and intermediate field range, a pseudogap metal that exhibits a single-particle gap and a doping-dependent magnetization plateau.
