论文标题
3级MOS $ _2 $多桥频道FET的集成与2D分层触点和栅极介电
Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric
论文作者
论文摘要
多桥通道场效应晶体管（MBCFET）提供了比FinFET技术的多个优势，并且是低5 nm技术节点的有吸引力的解决方案。对于使用半导体分层材料（例如，MOS $ _2 $）作为通道，MBCFET是自然的选择，因为它们的无键超薄的性质以及逐层转移的可能性。因此，MOS $ _2的MBCFET是驱动电流提升的有吸引力的命题，而不会损害静电和足迹。在这里，我们演示了一个3级MOS $ _2 $ MBCFET，其中每个垂直堆叠的频道都双门控以达到174.9 $μ$ a的饱和电流（该频率为\ txc {\ txc {90 $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ m m脚的宽度比率$> $$ 10^8 $。
Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered materials (such as, MoS$_2$) as the channel due to their dangling-bond-free ultra-thin nature and the possibility of layer-by-layer transfer. MoS$_2$-based MBCFET is thus an attractive proposition for drive current boost without compromising on the electrostatics and footprint. Here we demonstrate a 3-level MoS$_2$ MBCFET, where each vertically stacked channel is dual-gated to achieve a saturation current of 174.9 $μ$A (which translates to \txc{90 $μ$A per $μ$m footprint width (@2.7 $μ$m channel length), a near-ideal sub-threshold slope of 63 mV/dec, and an on-off ratio $>$$10^8$. This work sets the benchmark for layer-material-based MBCFET in terms of the number of parallel channels integrated, simultaneously providing high drive current and excellent electrostatic control.
