论文标题
在1 $ t $ -tas $ _2 $ AT equilibrium中观察金属马赛克阶段
Observation of the metallic mosaic phase in 1$T$-TaS$_2$ at equilibrium
论文作者
论文摘要
在165〜K以下的温度下,过渡金属二甲基化型二硫化物二硫化物(1 $ t $ -tas $ _2 $)在温度下也具有相应的电荷密度波(CCDW),在那里也变得绝缘。低温CCDW相可以通过激光或电压脉冲驱动到亚电势“马赛克”相中,该脉冲显示出较大密度的CDW域壁以及电子带隙的关闭。该脉冲诱导的金属镶嵌物的确切起源尚未完全了解。在这里,使用扫描隧道显微镜和光谱法(STM/STS),我们观察到在TAS $ _2 $表面上出现这种金属镶嵌相,而没有先前的脉冲激发,而不是$ 100 \ times 100 $ 〜nm $^2 $的连续区域,并在毫米计尺度上进行摩克镜区域。我们将镶嵌相的外观归因于表面缺陷的存在,这会导致特征性密集域壁网络的形成。基于我们的STM测量值,我们进一步论证了如何通过顶层的局部堆叠差异来解释金属行为在镶嵌相中的外观。因此,我们提供了一个潜在的途径来解释脉冲诱导的镶嵌相的起源。
The transition-metal dichalcogenide tantalum disulphide (1$T$-TaS$_2$) hosts a commensurate charge density wave (CCDW) at temperatures below 165~K where it also becomes insulating. The low temperature CCDW phase can be driven into a metastable "mosaic" phase by means of either laser or voltage pulses which shows a large density of CDW domain walls as well as a closing of the electronic band gap. The exact origins of this pulse-induced metallic mosaic are not yet fully understood. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we observe the occurrence of such a metallic mosaic phase on the surface of TaS$_2$ without prior pulse excitation over continuous areas larger than $100 \times 100$~nm$^2$ and macroscopic areas on the millimetre scale. We attribute the appearance of the mosaic phase to the presence of surface defects which cause the formation of the characteristic dense domain wall network. Based on our STM measurements, we further argue how the appearance of the metallic behaviour in the mosaic phase could be explained by local stacking differences of the top layer. Thus, we provide a potential avenue to explain the origin of the pulse induced mosaic phase.