论文标题
通过连接参数的分布引起的自旋转移磁极磁性随机访问记忆的写入错误率的分布
Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters
论文作者
论文摘要
从理论上研究了由电阻区域产物和各向异性常数分布引起的自旋转移磁磁性随机访问记忆（STT MRAM）的写入错误率（WER）的分布。假设WER比Unity小得多，并且连接参数遵守正态分布，我们表明WER服从对数正态分布。我们得出概率密度函数和统计措施的分析表达式。我们发现，可以通过降低脉冲宽度来降低WER的变化系数。我们还基于Fokker-Planck方程进行数值模拟，并确认分析表达式的有效性。结果对于设计可靠的STT MRAM很有用。
Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy constant is theoretically studied. Assuming that WER is much smaller than unity, and junction parameters obey a normal distribution, we show that the WER obeys a logarithmic normal distribution. We derive analytical expressions for the probability density function and statistical measures. We find that the coefficient of variation of WER can be reduced by decreasing the pulse width. We also perform numerical simulations based on the Fokker-Planck equation and confirm the validity of the analytical expressions. The results are useful for designing reliable STT MRAMs.
