论文标题
在脉冲形状歧视方面的研究,以进行优化的ASIC设计
Studies in Pulse Shape Discrimination for an Optimized ASIC Design
论文作者
论文摘要
硅光电塑料(SIPM)的持续进步使它们成为快速中子和伽马相互作用之间的低后坐力能量脉冲形状辨别(PSD)的生存,当耦合到适当的闪烁体时。同时,典型阵列中的大量通道要求开发低成本和低功率电子产品。自定义集成电路(ASIC)是为此目的的理想解决方案。为了评估对这种ASIC的要求,使用两个闪烁体的Stilbene和EJ-276进行了研究,并与Onsemi的6 x 6 mm SIPM耦合。我们证明,这两个闪烁体对于从100 keV到几个MEV的相互作用能进行PSD都可行,同时优化了PSD度量中使用的集成周期。这些测量值为正在开发的ASIC的设计参数。
The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate scintillator. At the same time, the large number of channels in a typical array calls for the development of low-cost and low-power electronics. A custom integrated circuit (ASIC) is an ideal solution for this purpose. To assess the requirements for such an ASIC, studies were performed using two scintillators, Stilbene and EJ-276, coupled to a 6 x 6 mm SiPM from Onsemi. We demonstrate that both scintillators are viable for performing PSD for interaction energies from 100 keV to several MeV while optimizing the integration periods used in the PSD metric. These measurements inform the design parameters of the ASIC under development.