论文标题
比较研究在Cu的不同定向晶粒中的H积累
Comparative study of H accumulation in differently oriented grains of Cu
论文作者
论文摘要
当金属表面暴露于氢离子辐射时，预计光离子将渗透到材料中并溶解在基质中。但是，这些原子被认为会引起表面的重大修饰，表明它们在表面附近积聚。称为起泡的过程可能会降低金属表面上方的真空介电强度，从而显示出密集的表面水泡。在本文中，我们研究了气泡如何在气泡壁上施加的压力下生长，以及它如何影响Cu表面，无论是否施加外部电场。
When metal surfaces are exposed to hydrogen ion irradiation, the light ions are expected to penetrate deep into the material and dissolve in the matrix. However, these atoms are seen to cause significant modification of surfaces, indicating that they accumulate in vicinity of the surface. The process known as blistering may reduces the vacuum dielectric strength above the metal surface, which shows a dense population of surface blisters. In this paper, we investigate how a bubble can grow under the pressure exerted by hydrogen atoms on the walls of the bubble and how this affect to the surface of Cu, whether an external electric field is applied or not.
