论文标题
高Q因子硅氮化物纳米力学谐振器由无膜无秒的激光微型缓存制造
High Q-Factor Silicon Nitride Nanomechanical Resonators Fabricated by Maskless Femtosecond Laser Micro-machining
论文作者
论文摘要
独立式氮化硅（SIN）设备是纳米力学谐振器领域以及其他技术应用（例如传输电子成像和纳米生物测定）的核心。用于制造这些设备的纳米制造技术通常缺乏灵活性。尽管光刻需要为每种新设计迭代打印昂贵的光掩模，但电子束光刻的速度非常慢，并且要高高的设备成本。在这里，我们演示了由飞秒激光消融在环境空气中的平原sin膜制造的独立式纳米力学谐振器的无掩模的快速原型制作。我们制造了从7到100 UM的不同宽度的微束，我们表征了它们的共振频率和机械质量（Q）因子。我们发现，通过仔细设计蚀刻图案，可以在制造过程中避免膜破裂，并且激光蚀刻对内置拉伸应力的影响可忽略不计。对于每个梁，测量了几个本征码的Q因子，并发现激光蚀刻后保持高。所有光束均显示出大于105的质量因子，而未蚀刻的普通膜的质量为Q> 106。确定了Q-因子减少的可能原因，以及未来的过程改进方向。
Freestanding Silicon nitride (SiN) devices are central to the field of nanomechanical resonators and for other technology applications such as transmission electron imaging and nanopore bioassays. The nanofabrication techniques used for fabricating these devices often lack flexibility. While photolithography requires printing of an expensive photomask for each new design iteration, electron-beam lithography is extremely slow and commands high equipment cost. Here we demonstrate maskless rapid prototyping of freestanding SiN nanomechanical resonators fabricated by femtosecond laser ablation of plain SiN membrane in ambient air. We fabricate microbeams with different widths from 7 to 100 um, and we characterize their resonance frequency and mechanical quality (Q) factors. We find that membrane cracking can be avoided during fabrication by carefully engineering the etch pattern, and that laser etching has a negligible effect on built-in tensile stress. For each beam, Q-factors are measured for several eigenmodes and are found to remain high after laser etching. All beams show quality factors greater than 105, while unetched plain membranes have Q > 106. Possible causes for Q-factor reduction are identified, along with future process improvement directions.
