论文标题
瞬态光电压分析的时域阻抗方法
Time-domain impedance method for transient photovoltage analysis
论文作者
论文摘要
在这项工作中，我们通过等效的RC电路模型近似NM大小的ZnO膜中的表面光伏（SPV）瞬变。在275 nm处令人兴奋的光脉冲以不同的脉冲宽度范围为1.2至12 mc之后，SPV的时间及时增加了约90 mc。该观察结果的关键是膜中有相当多的缺陷，在等效电路中形成了陷阱电容。膜表面附近的非平衡电子和孔的光生是通过电流源充电的电容来描述，而空间分离的速率由电阻确定。这种电阻反映了载体运动的障碍，而另一个电容决定了电荷分离距离。电子孔重组是引入等效电路的第二电阻。所得的建模SPV瞬态可以很好地重现观察到的实验曲线。
In this work, we approximate the surface photovoltage (SPV) transients in nm-sized ZnO films by the equivalent RC circuit model. The SPV rises in time in time for about 90 mcs after the exciting light pulse at 275 nm is off at different pulse widths ranging from 1.2 to 12 mcs. The key to this observation is a considerable amount of defects in the films, which form a trap capacitance in the equivalent circuit. The photogeneration of nonequilibrium electrons and holes near the film surface is described by charging of a capacitance by the current source whereas the rate of their spatial separation is determined by a resistance. This resistance reflects an obstacle in the carrier movement while another capacitance determines the charge separation distance. The electron-hole recombination is account for a second resistance introduced into the equivalent circuit. The resulting modeled SPV transient allows to reproduce the observed experimental curve rather well.
