论文标题
二维Van der Waals材料Fe $ _3 $ gete $ _2 $中的磁阻尼各向异性
Magnetic damping anisotropy in the two-dimensional van der Waals material Fe$_3$GeTe$_2$ from first principles
论文作者
论文摘要
在二维流动的铁磁范德华材料Fe $ _3 $ gete $ _2 $（低于居里温度）中，磁化松弛对于对低维旋转器设备的应用至关重要。我们使用第一原理散射理论来计算散装和单层FE $ _3 $ gete $ _2 $的温度依赖吉尔伯特阻尼。由于电阻率般的行为的优势，计算出的大量Fe $ _3 $ gete $ _2 $的阻尼频率随温度而单调地增加。相比之下，对于单层的阻尼频率发现了非常弱的温度依赖性，这归因于这种高度约束的几何形状中的强表面散射。对阻尼各向异性的系统研究表明，散装和单层FE3Gete2都存在方向各向异性。旋转各向异性在低温下对于整个层和单层都是显着的，并且由于温度诱导的疾病逐渐减少。旋转各向异性可以显着增强高达430％的封闭式单层Fe $ _3 $ gete $ _2 $。
Magnetization relaxation in the two-dimensional itinerant ferromagnetic van der Waals material Fe$_3$GeTe$_2$, below the Curie temperature, is fundamentally important for applications to low-dimensional spintronics devices. We use first-principles scattering theory to calculate the temperature-dependent Gilbert damping for bulk and single-layer Fe$_3$GeTe$_2$. The calculated damping frequency of bulk Fe$_3$GeTe$_2$ increases monotonically with temperature because of the dominance of resistivitylike behavior. By contrast, a very weak temperature dependence is found for the damping frequency of a single layer, which is attributed to strong surface scattering in this highly confined geometry. A systematic study of the damping anisotropy reveals that orientational anisotropy is present in both bulk and single-layer Fe3GeTe2. Rotational anisotropy is significant at low temperatures for both the bulk and a single layer and is gradually diminished by temperature-induced disorder. The rotational anisotropy can be significantly enhanced by up to 430% in gated single-layer Fe$_3$GeTe$_2$.
