论文标题
掺杂和几何形状对半垂直gan-on-Si Mos电容器的故障电压的影响
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
论文作者
论文摘要
为了开发可靠的垂直GAN晶体管，必须对栅极堆栈的稳健性进行详细分析，这是过程参数和材料属性的函数。为了这个目的，我们报告了平面gan-on-si mos电容器的分解性能的详细分析。该分析是对在不同gan散装掺杂（6E18 SI/CC，6E17 SI/CC和2.5E18 mg/cc，p-type）上处理的电容器上进行的分析。我们证明（i）P-GAN的电容器具有更好的分解性能； （ii）沟槽结构的存在显着降低了崩溃功能； （iii）崩溃电压取决于面积，较小尺寸的鲁棒性降低； （iv）故障电压与形状（矩形，圆形）无关。 TCAD模拟与测量结果一致，说明了电场分布接近分解，并通过实验阐明了获得的结果。
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces breakdown capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally.
