论文标题
Milliwatt Terahertz谐波产生从拓扑绝缘子超材料
Milliwatt terahertz harmonic generation from topological insulator metamaterials
论文作者
论文摘要
在Terahertz光谱域中实现有效的高功率谐波生成具有技术应用,例如在第六代(6G)通信网络中。无质量的狄拉克·费米(Dirac Fermions)具有极大的Terahertz非线性敏感性和谐波转换效率。然而,由于在增加的入射力时,观察到的最大产生的谐波功率受到限制,如最近所示的石墨烯。在这里,我们演示了bi $ _2 $ _2 $ _3 $拓扑绝缘子和拓扑绝缘子胶结剂的超质结构的室温Terahertz和谐产生,并具有表面选择性的Terahertz田地增强。我们获得了接近毫米范围的第三谐波,与基准的石墨烯样品相比,两种数量级的入射力为75兆瓦。我们建立了一个框架,在该框架中,这种出色的性能是无质量拓扑表面状态产生热力动力谐波的结果,这受益于通过表面堆积的库仑相互作用的超快耗散电子热的耗散。这些结果是迈向片上Terahertz(Opto)电子应用的重要一步。
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications.