论文标题
综合O-和C波段硅氯尼替奈德·马赫·齐汉德调节剂具有100 GHz带宽，低压和低损耗
Integrated O- and C-band Silicon-Lithium Niobate Mach-Zehnder Modulators with 100 GHz Bandwidth, Low Voltage, and Low Loss
论文作者
论文摘要
宽带综合薄膜Niobate（TFLN）电光调节器（EOM）对于O波段（1310 nm）和C波段（1550 nm）中的光学通信和信号处理都是可取的。为了满足这些需求，我们设计并演示了基于与铸造型硅光子波导的TFLN键合的混合平台中的Mach-Zehnder（MZ）EOM设备。使用单个硅光刻步骤和单个粘结步骤，我们意识到覆盖两个波长在同一芯片上的MZ EOM设备。 EOM设备可实现100 GHz EO带宽（参考1 GHz），约2-3 v $。$ cm的数字（$v_πl$），O-Band和c-band均具有低芯片光学损失。
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon lithography step and a single bonding step, we realize MZ EOM devices which cover both wavelength ranges on the same chip. The EOM devices achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V$.$cm figure-of-merit ($V_πL$) with low on-chip optical loss in both the O-band and C-band.
