论文标题

设备不匹配在差分振荡神经网络中的影响

Effect of Device Mismatches in Differential Oscillatory Neural Networks

论文作者

Shamsi, Jafar, Avedillo, María José, Linares-Barranco, Bernabé, Serrano-Gotarredona, Teresa

论文摘要

振荡性神经网络(ONNS)的模拟实施具有实施快速和超低功率计算功能的潜力。模拟实现的缺点之一是组件不匹配,在ONNS中导致不同步和不稳定性。新兴设备(如备忘录和VO2)特别容易变化。在本文中,我们研究了组件不匹配对差分ONNS(Donns)性能的影响。在两个主要区块中考虑了不匹配:差异振荡性神经元和突触电路。为了测量每个块中对不匹配的耐受性,评估了性能,每个块中分别存在不匹配。带有四个回忆录的备忘录桥电路用作突触电路。差异振荡神经元基于VO2驱动器。仿真结果表明,与突触电路中的不匹配相比,Donn性能更容易受到差分振荡神经元组成部分的不匹配。在突触电路的回忆中,发现dons忍受了多达20%的不匹配。但是,差分振荡神经元的不匹配导致固有频率不均匀,导致对异步和不稳定性。模拟表明,固有频率的0.5%相对标准偏差(RSD)可以大大降低表现。此外,灵敏度分析表明,Vo2-devices的高阈值电压是频率不均匀性和不同步的最敏感参数。

Analog implementation of Oscillatory Neural Networks (ONNs) has the potential to implement fast and ultra-low-power computing capabilities. One of the drawbacks of analog implementation is component mismatches which cause desynchronization and instability in ONNs. Emerging devices like memristors and VO2 are particularly prone to variations. In this paper, we study the effect of component mismatches on the performance of differential ONNs (DONNs). Mismatches were considered in two main blocks: differential oscillatory neurons and synaptic circuits. To measure DONN tolerance to mismatches in each block, performance was evaluated with mismatches being present separately in each block. Memristor-bridge circuits with four memristors were used as the synaptic circuits. The differential oscillatory neurons were based on VO2-devices. The simulation results showed that DONN performance was more vulnerable to mismatches in the components of the differential oscillatory neurons than to mismatches in the synaptic circuits. DONNs were found to tolerate up to 20% mismatches in the memristance of the synaptic circuits. However, mismatches in the differential oscillatory neurons resulted in non-uniformity of the natural frequencies, causing desynchronization and instability. Simulations showed that 0.5% relative standard deviation (RSD) in natural frequencies can reduce DONN performance dramatically. In addition, sensitivity analyses showed that the high threshold voltage of VO2-devices is the most sensitive parameter for frequency non-uniformity and desynchronization.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源