论文标题

悬挂并用六边形硼硼固定的扭曲双层石墨烯的电子特性

Electronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitride

论文作者

Long, Min, Zhan, Zhen, Pantaleón, Pierre A., Silva-Guillén, Jose Ángel, Guinea, Francisco, Yuan, Shengjun

论文摘要

最近观察到的异常大厅在魔术角扭曲双层石墨烯(TBG)中与六角硼(HBN)对齐(HBN)和非常规铁电位在Bernal Bernal双层石墨烯中,由HBN夹杂在HBN中,呈现了一个新的平台,这些平台在石墨烯系统中具有新的平台。在这些基于石墨烯的Moiré超晶格中,对齐的HBN底物起着重要作用。在本文中,我们分析了HBN底物对TBG带结构的影响。通过原子紧密结合模型,我们计算了用HBN悬浮并封装的TBG的电子特性。有趣的是,我们发现TBG的物理特性对HBN的存在极为敏感,如果TBG悬挂或封装,它们可能完全不同。我们通过分析它们的电子性能,光导率和带拓扑来量化这些差异。我们发现,狭窄的带宽,带隙,状态的局部密度和光学电导率被对齐的HBN底物显着改变。有趣的是,这些电子特性可以用作实验中比对的签名。此外,在存在或不存在两个倍旋转对称响应的情况下,TBG/HBN超晶格对外部电场的响应有所不同。对于悬浮在HBN中的TBG,电场的应用导致石墨烯层之间的电荷分布不均,可用于调整山谷大厅效应的强度或异常大厅效应。这些系统中如此丰富的拓扑相图可能对实验有用。

The recent observed anomalous Hall effect in magic angle twisted bilayer graphene (TBG) aligned to hexagonal boron nitride (hBN) and unconventional ferroelectricity in Bernal bilayer graphene sandwiched by hBN present a new platform to tune the correlated properties in graphene systems. In these graphene-based moiré superlattices, the aligned hBN substrate plays an important role. In this paper, we analyze the effects of hBN substrate on the band structure of the TBG. By means of an atomistic tight-binding model we calculate the electronic properties of TBG suspended and encapsulated with hBN. Interestingly, we found that the physical properties of TBG are extremely sensitive to the presence of hBN and they may be completely different if TBG is suspended or encapsulated. We quantify these differences by analysing their electronic properties, optical conductivity and band topology. We found that the narrow bandwidth, band gap, local density of states and optical conductivity are significantly modified by the aligned hBN substrates. Interestingly, these electronic properties can be used as a signature of the alignment in experiment. Moreover, the TBG/hBN superlattices in the presence or absence of the two-fold rotation symmetry response differently to the external electric field. For the TBG suspended in the hBN, application of an electric field results in the charge unevenly distributed between graphene layers, which can be used to tune the strength of the valley Hall effect or the anomalous Hall effect. Such rich topological phase diagram in these systems may be useful for experiments.

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