论文标题
集成在硅光子学中的多层Gagete电气设备
A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics
论文作者
论文摘要
电气可调的设备对光子学整合电路的关键功能产生了显着贡献。在这里，我们基于硅微环谐振器（SI-MRR）上的多层各向异性Gagete的混合整合来证明折射光学指数的调整。在静态应用（DC）偏置和横向电动（TE）极化下，该设备表现出线性共振移位而没有任何振幅调制。但是，对于横向磁（TM）极化，观察到振幅和相位调制。 TE极化的相应波长偏移和半波电压长度产物（v_π.l）分别为1.78 pm/v和0.9 v.cm。 TM极化增强了这些值，分别对应于6.65 pm/v和0.28 v.cm。在不同的偏置条件下，还测试了设备的动态射频（RF）响应。值得注意的是，该设备分别在0 V和7 V偏置时表现出1.6 MHz和2.1 MHz响应。基于这些发现，在硅光子平台上2D Gagete的集成在下一代的集成光子应用（例如开关和相位变速器）中具有巨大的潜力。
Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation are observed. The corresponding wavelength shift and half-wave voltage length product (V_π.l) for the TE polarization are 1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters.
