论文标题
疾病对高阶拓扑绝缘子中无泵的影响
Effects of Disorder On Thouless Pumping In Higher-Order Topological Insulators
论文作者
论文摘要
我们研究了随机现场障碍对非相互作用的费米斯贝纳卡尔 - 伯内维格·休斯（BBH）模型的高阶泵送的影响。广泛探索了无序诱导的拓扑相变和离域 - 定位转变的相互作用。较高的泵泵的特征是量化的角对角电荷运输和非零Chern数，并且通过使用反参与率和能量级统计数据来分析定位定位跃迁。结果表明，量化的角对角电荷运输在强障碍中破裂，在这种疾病中，由于疾病的影响，瞬时散装能量隙被封闭。而，尽管瞬时本征态已定位，但电荷运输仍保持量化。这归因于由定期驾驶引起的离域浮子状态。此外，从量化的电荷传输到拓扑的泵送的相变伴随着无序诱导的浮球状态的离域 - 定位转变。
We investigate the effects of random onsite disorder on higher-order Thouless pumping of noninteracting fermionic Benalcazar-Bernevig-Hughes (BBH) model. The interplay of disorderinduced topological phase transition and delocalization-localization transition is extensively explored. The higher-order Thouless pumping is characterized by the quantized corner-to-corner charge transport and nonzero Chern number, and the delocalization-localization transition is analyzed by utilizing both inverse participation ratio and energy-level statistics. The results show that the quantized corner-to-corner charge transport is broken in the strong disorder, where the instantaneous bulk energy gap is closed due to effects of disorder. While, although the instantaneous eigenstates are localized, the charge transport remains quantized. This is attributed to delocalized Floquet states caused by the periodic driving. Furthermore, the phase transition from the quantized charge transport to topologically trivial pumping is accompanied by the disorder-induced delocalization-localization transition of Floquet states.
