论文标题
双层石墨烯晶体管中的Terahertz光电导率：栅极诱导的连接处的隧穿的证据
Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
论文作者
论文摘要
新型材料的光电导率是光电探测器，光学调节器和开关设计的关键特性。尽管大多数新型2D材料的光电导率在理论上和实验上都进行了研究，但对于大多数电子设备的必要块的2D P-N连接而言，情况并非如此。在这里，我们研究了带有电诱导的P-N连接的间隙双层石墨烯的亚terahertz光接合性。我们发现，连接对电阻，电阻系数和在低温温度T〜20 K处的抗积极贡献。从连接处对这些数量的贡献也超过了均匀通道处的构成量，即使在小带隙〜10 MEV处也是如此。我们进一步表明，正连接光抗性是带间隧道的标志，而不是带内热传导的标志。我们的结果表明，基于双层石墨烯（包括陡峭的晶体管和选择性传感器）创建各种带间隧道设备的可能性。
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
