论文标题

超导体抗性绝缘体异质结构中异常抗性行为的当前重新分布模型

Current redistribution model of anomalous resistance behaviour in superconductor-topological insulator heterostructures

论文作者

S., Abhirami, Amaladass, Edward Prabu, Sharma, Prashant, K., Vinod, V., Thanikaiarasu A., Mani, Awadhesh

论文摘要

在超导-TI(NBN-BI1.95SB0.05SE3)的拓扑绝缘体(Ti)表面上观察到异常的阻力上升和衰退,距界面约为〜mm长度的异质结构。进行了磁转运测量,以验证由于NBN层的超导过渡而引起的异常。由于在NBN-AU和NBN-AL异质结构中观察到相似的异常,因此排除了由于自旋偏振Ti表面状态引起的远程超导接近效应的可能性。人们发现,由于几何效应,由于当前的超导体TI接口处重新分布而引起了异常的阻力跳跃。使用COMSOL软件包获得的有限元分析获得的结果验证了超导体-TI和超导体 - 金属异质结构中远程电阻异常的拟议电流重新分布(CRD)模型。

Anomalous resistance upturn and downturn have been observed on the topological insulator (TI) surface in superconductor-TI (NbN-Bi1.95Sb0.05Se3) heterostructures at ~ mm length scales away from the interface. Magnetotransport measurements were performed to verify that the anomaly is caused due to the superconducting transition of the NbN layer. The possibility of long range superconducting proximity effect due to the spin-polarized TI surface state was ruled out due to the observation of similar anomaly in NbN-Au and NbN-Al heterostructures. It was discovered that the unusual resistance jumps were caused due to current redistribution at the superconductor-TI interface on account of the geometry effects. Results obtained from finite element analysis using COMSOL package has validated the proposed current redistribution (CRD) model of long range resistance anomalies in superconductor-TI and superconductor-metal heterostructures.

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