论文标题
hf $ _ {0.5} $ _ {0.5} $ _ {0.5} $ _ {0.5} $ _2
Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films
论文作者
论文摘要
在这项工作中，我们报告了较高的残余极化，2Pr> 70 $ $ $ $ $ $ cm $^2 $在热处理的原子层中，将HF0.5ZR0.5O2（HZO）膜沉积在NH3等离子体上，带有NH3等离子体，裸露的Tin Tin Tin Tin Tin Tine Interlayer和Tungsten（W）作为顶部电极。将层中层中HZO的铁电特性的影响与标准金属 - 有线 - 金属和金属 - 弗罗伊特罗电导器结构进行了比较。 X射线衍射表明，随着TIN的变化，正聚（O）相的增加。但是，O期中的应变在2 nm TIN处最高，然后在No-Tin情况下显着放松。 HRTEM图像表明，超薄锡在HzO中的局部外观层充当种子层，可能会增加应变，从而在残余极化中产生2倍的改善。最后，HZO设备被证明是无唤醒的，并且表现出耐力> 10^6个周期。这项研究开辟了一条途径，以在SI上获得外延铁膜，并提高记忆性能。
In this work, we report a high remnant polarization, 2Pr >70$μ$C/cm$^2$ in thermally processed atomic layer deposited Hf0.5Zr0.5O2 (HZO) film on Silicon with NH3 plasma exposed thin TiN interlayer and Tungsten (W) as a top electrode. The effect of interlayer on the ferroelectric properties of HZO is compared with standard Metal-Ferroelectric-Metal and Metal-Ferroelectric-Semiconductor structures. X-Ray Diffraction shows that the Orthorhombic (o) phase increases as TiN is thinned. However, the strain in the o-phase is highest at 2 nm TiN and then relaxes significantly for the no-TiN case. HRTEM images reveal that the ultra-thin TiN acts as a seed layer for the local epitaxy in HZO potentially increasing the strain to produce a 2X improvement in the remnant polarization. Finally, the HZO devices are shown to be wake-up-free, and exhibit endurance >10^6 cycles. This study opens a pathway to achieve epitaxial ferroelectric HZO films on Si with improved memory performance.
