论文标题
霍夫史塔特(Hofstadter)和半导体摩尔(Moiré)
Hofstadter states and reentrant charge order in a semiconductor moiré lattice
论文作者
论文摘要
Moiré材料具有平坦带的材料提供了一个系统地研究和精确控制相关电子相的平台。在这里,我们报告了扭曲的WSE WSE $ _2 $/MOSE $ _2 $ HeteroBilayer的本地电子压缩性测量,该测量揭示了互穿的Hofstadter状态和电子固体的丰富相图。我们表明,这反映了平坦和分散莫伊尔带的存在,它们的相对能量(因此占用)是通过密度和磁场调节的。在低密度的情况下,莫伊尔乐队之间的竞争导致从双重占用站点的单链条安排到高田的三胞胎配置的过渡。霍夫史塔特状态(即,奇恩绝缘子)通常在高密度下受到偏爱,因为分散带被人填充,但由于较高的电荷有序状态的介入区域所抑制,其中孔源自多个带的孔。我们的结果揭示了在半导体Moiré系统中有利于独特相关基态的关键显微成分,它们证明了一个新兴的晶格模型系统,在该系统中,相互作用和带分散都可以通过实验控制。
The emergence of moiré materials with flat bands provides a platform to systematically investigate and precisely control correlated electronic phases. Here, we report local electronic compressibility measurements of a twisted WSe$_2$/MoSe$_2$ heterobilayer which reveal a rich phase diagram of interpenetrating Hofstadter states and electron solids. We show that this reflects the presence of both flat and dispersive moiré bands whose relative energies, and therefore occupations, are tuned by density and magnetic field. At low densities, competition between moiré bands leads to a transition from commensurate arrangements of singlets at doubly occupied sites to triplet configurations at high fields. Hofstadter states (i.e., Chern insulators) are generally favored at high densities as dispersive bands are populated, but are suppressed by an intervening region of reentrant charge-ordered states in which holes originating from multiple bands cooperatively crystallize. Our results reveal the key microscopic ingredients that favor distinct correlated ground states in semiconductor moiré systems, and they demonstrate an emergent lattice model system in which both interactions and band dispersion can be experimentally controlled.