论文标题
基于神经元突触强度的自发丧失记忆持续活动的机理描述
Mechanistic description of spontaneous loss of memory persistent activity based on neuronal synaptic strength
论文作者
论文摘要
与工作记忆（WM）相关的持续性神经活动持续时间有限。当前的理论表明，其终止是通过抑制性电流获得的\ textit {aidity}，目前尚无关于\ textit {vextIt {vextive}内存 - 损失机制终止内存持久活动的可能性的理论。在这里，我们基于突触强度开发了一种分析框架，并通过模拟和与湿的实验进行拟合显示，被动记忆损失可能是离子 - 电流的长期高原的结果，即记忆的缓慢降低，随后是突然损失。当记忆状态略低于关键时，我们可以通过分析地描述高原。包括高原在内的这些结果得到了对大鼠进行的实验的支持。此外，我们表明，即使高于关键性，也可能由于神经元的噪声而发生健忘，而离子电流波动会产生高原，代表记忆力非常缓慢的记忆，最终会产生快速的内存衰减。我们的结果可能会通过修改神经元噪声来开发针对记忆障碍的新药物具有影响。
Persistent neural activity associated with working memory (WM) lasts for a limited time duration. Current theories suggest that its termination is \textit{actively} obtained via inhibitory currents, and there is currently no theory regarding the possibility of a \textit{passive} memory-loss mechanism that terminates memory persistent activity. Here, we develop an analytical-framework, based on synaptic strength, and show via simulations and fitting to wet-lab experiments, that passive memory-loss might be a result of an ionic-current long-term plateau, i.e., very slow reduction of memory followed by abrupt loss. We describe analytically the plateau, when the memory state is just below criticality. These results, including the plateau, are supported by experiments performed on rats. Moreover, we show that even just above criticality, forgetfulness can occur due to neuronal noise with ionic-current fluctuations, yielding a plateau, representing memory with very slow decay, and eventually a fast memory decay. Our results could have implications for developing new medications, targeted against memory impairments, through modifying neuronal noise.
