论文标题
通过量子Zeno和抗Zeno效应调整核诱导的局部电子的自旋松弛
Tuning the nuclei-induced spin relaxation of localized electrons by the quantum Zeno and anti-Zeno effects
论文作者
论文摘要
操纵电子旋转时，量子测量后的动作从根本上是不可避免的。在这里，我们证明可以有效利用这种背部动作来调整由超细相互作用引起的局部电子的自旋松弛。在光泵探针实验中，由于量子Zeno效应，强大的探针脉冲抑制了Ingaas Epilayer中SI供体对电子的自旋松弛。相比之下，由于量子抗Zeno效应，探针功率的增加导致Ingaas量子点中电子的自旋松弛速度的速度。显微镜描述表明，当自旋去向时间与探针脉冲重复期相当时，这两个方案之间的过渡发生。
Quantum measurement back action is fundamentally unavoidable when manipulating electron spins. Here we demonstrate that this back action can be efficiently exploited to tune the spin relaxation of localized electrons induced by the hyperfine interaction. In optical pump-probe experiments, powerful probe pulses suppress the spin relaxation of electrons on Si donors in an InGaAs epilayer due to the quantum Zeno effect. By contrast, an increase of the probe power leads to a speed up of the spin relaxation for electrons in InGaAs quantum dots due to the quantum anti-Zeno effect. The microscopic description shows that the transition between the two regimes occurs when the spin dephasing time is comparable to the probe pulse repetition period.
