论文标题
从有效的薄毛线极限的绝热制备Chern绝缘子的绝热制备
Adiabatic preparation of fractional Chern insulators from an effective thin-torus limit
论文作者
论文摘要
我们探讨了分数Chern绝缘子(FCIS)的准一维(薄图或TT)极限,作为其在量子模拟器中绝热制备的起点。我们的方法是基于将跳跃振幅朝一个方向调整为实验正态旋钮以动态改变系统的有效纵横比。类似于连续体中分数量子厅(FQH)系统的TT极限,我们发现跳跃诱导的TT限制绝热地将FCI状态连接到微不足道的电荷密度波(CDW)基态。可以利用这种绝热路径来依靠CDW状态的初始化,然后是跳高各向异性的绝热降低。我们的发现基于在晶格和由耦合电线组成的许多FCI模型中的激发差距的计算。通过强烈各向异性跳跃极限的间隙计算,我们表明它的缩放率与大型FCI的制备兼容,以进行足够大的跳跃各向异性。我们在精确对角网框架中的数值模拟探索了整个各向异性范围,以证实这些结果。
We explore the quasi one-dimensional (thin torus, or TT) limit of fractional Chern insulators (FCIs) as a starting point for their adiabatic preparation in quantum simulators. Our approach is based on tuning the hopping amplitude in one direction as an experimentally amenable knob to dynamically change the effective aspect ratio of the system. Similar to the TT limit of fractional quantum Hall (FQH) systems in the continuum, we find that the hopping-induced TT limit adiabatically connects the FCI state to a trivial charge density wave (CDW) ground state. This adiabatic path may be harnessed for state preparation schemes relying on the initialization of a CDW state followed by the adiabatic decrease of a hopping anisotropy. Our findings are based on the calculation of the excitation gap in a number of FCI models, both on a lattice and consisting of coupled wires. By analytical calculation of the gap in the limit of strongly anisotropic hopping, we show that its scaling is compatible with the preparation of large size FCIs for sufficiently large hopping anisotropy. Our numerical simulations in the framework of exact diagonalization explore the full anisotropy range to corroborate these results.