论文标题
COMPHY v3.0-用于建模电荷诱捕相关可靠性现象的紧凑型物理框架
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
论文作者
论文摘要
电荷陷阱对电子设备的可靠性起着重要作用，并以各种现象表现出自己的表现，例如偏置温度不稳定性（BTI），随机电报噪声（RTN），滞后或陷阱辅助隧道（TAT）。在这项工作中，我们提出了Comphy v3.0，这是一种开源物理框架，用于使用非辐射性多孔理论以一维设备的几何形状以统一的方式建模这些效果。在这里，我们提供了有关基础理论的概述，讨论与原始综合框架相比新引入的功能，并回顾这些新功能实现的可靠性物理学的最新进展。几个实际示例，包括自动提取缺陷分布，高K电容器中TAT的建模以及在低温温度下的BTI/RTN建模，强调了Comphy v3.0对可靠性社区的有用性。
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-k capacitors and BTI/RTN modeling at cryogenic temperatures.
