论文标题
工作功能工程电荷等离子体 - 阵线双门隧道隧道田间效果晶体管晶体管用于低功率开关应用
Work Function Engineered Charge Plasma-Germanium Double Gate Tunnel Field Effect Transistor for Low-Power Switching Applications
论文作者
论文摘要
在这里，我们提出了一个电荷等离子体（CP）的锗双门隧道隧道磁场晶体晶体管（GE-DGTFET）设备结构，其中使用源电极的工作函数工程在重掺杂的源区域中诱导CP。 CP可以创建电气冶金结，并将N-P-N转换为TFET的P-N-P-N结构，并增强排水电流，可靠性，消除了额外的口袋离子植入。与传统的GE-DGTFET设备结构相比，提出的CP-GE-DGTFET设备结构显示出出色的电气直流性能，例如高电流（ION），优异的离子/IOFF比和〜4.7e-4 A/UM，〜1.8e9和〜1.8e9和〜5.23 mv/dec，分别为〜4.7E-4 A/UM，低次阈值。此外，模拟/RF分析显示，跨导频，直立的截止频率，总电容较低，运输时间和功率延迟产品。因此，提出的具有替代通道材料GE，高\ k {appa} AL2O3的CP-GE-DGTFET设备结构以及源区域中的工作功能CP提供了高性能和成本效益的解决方案，用于下一代能源有效的开关应用。
Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode. The CP enables creation of electrical metallurgical junction and converts n-p-n to p-n-p-n structure of TFET and enhances the drain current, reliability, eliminate additional pocket ion-implantation. The proposed CP-Ge-DGTFET device structure revealed excellent electrical DC performance as compared to the conventional Ge-DGTFET device structure such as high ON current (ION), excellent ION/IOFF ratio, and low sub-threshold swing of ~4.7E-4 A/um, ~1.8E9, and ~5.23 mV/dec, respectively. Furthermore, analog/RF analyses revealed high transconductance, upright cut-off frequency, low overall capacitance, transit time, and power delay product. Therefore, the proposed CP-Ge-DGTFET device structure with alternate channel material Ge, High-\k{appa} Al2O3, and work function engineered CP in source region furnishes high performance and cost-effective solution for next-generation energy-efficient switching applications.
